Annealing reduces Si3⁢N4 microwave-frequency dielectric loss in superconducting resonators

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Abstract

The dielectric loss of silicon nitride (Si3⁢N4) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric Si3⁢N4 as a function of drive strength and temperature.

Year of Publication
2024
Date Published
2024-05
Journal Title
Phys. Rev. Applied
Volume
21
Issue
5
Start Page or Article ID
054044
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