Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)
Author | |
---|---|
Year of Publication |
2002
|
Date Published |
Jan-06-2002
|
Journal Title |
Journal of Crystal Growth
|
Volume |
241
|
Start Page or Article ID |
271-276
|
ISSN Number |
00220248
|
DOI | |
Download citation | |
JILA PI | |
Journal Article
|
|
Publication Status |