TY - JOUR
KW - Instrumentation
AU - Yuka Esashi
AU - Nicholas Jenkins
AU - Yunzhe Shao
AU - Justin Shaw
AU - Seungbeom Park
AU - Margaret Murnane
AU - Henry Kapteyn
AU - Michael Tanksalvala
AB - <jats:p>Imaging using coherent extreme-ultraviolet (EUV) light provides exceptional capabilities for the characterization of the composition and geometry of nanostructures by probing with high spatial resolution and elemental specificity. We present a multi-modal tabletop EUV imaging reflectometer for high-fidelity metrology of nanostructures. The reflectometer is capable of measurements in three distinct modes: intensity reflectometry, scatterometry, and imaging reflectometry, where each mode addresses different nanostructure characterization challenges. We demonstrate the system’s unique ability to quantitatively and non-destructively measure the geometry and composition of nanostructures with tens of square microns field of view and sub-nanometer precision. Parameters such as surface and line edge roughness, density, nanostructure linewidth, and profile, as well as depth-resolved composition, can be quantitatively determined. The results highlight the applicability of EUV metrology to address a wide range of semiconductor and materials science challenges.</jats:p>
BT - Review of Scientific Instruments
DO - 10.1063/5.0175860
IS - 12
N2 - <jats:p>Imaging using coherent extreme-ultraviolet (EUV) light provides exceptional capabilities for the characterization of the composition and geometry of nanostructures by probing with high spatial resolution and elemental specificity. We present a multi-modal tabletop EUV imaging reflectometer for high-fidelity metrology of nanostructures. The reflectometer is capable of measurements in three distinct modes: intensity reflectometry, scatterometry, and imaging reflectometry, where each mode addresses different nanostructure characterization challenges. We demonstrate the system’s unique ability to quantitatively and non-destructively measure the geometry and composition of nanostructures with tens of square microns field of view and sub-nanometer precision. Parameters such as surface and line edge roughness, density, nanostructure linewidth, and profile, as well as depth-resolved composition, can be quantitatively determined. The results highlight the applicability of EUV metrology to address a wide range of semiconductor and materials science challenges.</jats:p>
PB - AIP Publishing
PY - 2023
T2 - Review of Scientific Instruments
TI - Tabletop extreme ultraviolet reflectometer for quantitative nanoscale reflectometry, scatterometry, and imaging
VL - 94
SN - 0034-6748, 1089-7623
ER -