TY - CONF
AU - Fabian Holzmeier
AU - Kevin Dorney
AU - Esben Larsen
AU - Thomas Nuytten
AU - Dhirendra Singh
AU - Michiel van Setten
AU - Pieter Vanelderen
AU - Clayton Bargsten
AU - Seth Cousin
AU - Daisy Raymondson
AU - Eric Rinard
AU - Rod Ward
AU - Henry Kapteyn
AU - Stefan Böttcher
AU - Oleksiy Dyachenko
AU - Raimund Kremzow
AU - Marko Wietstruk
AU - Geoffrey Pourtois
AU - Paul van der Heide
AU - John Petersen
AU - Eric Panning
AU - Alexander Liddle
AB - Imec’s AttoLab is the first industrial laboratory capable of watching the ultrafast dynamics of photoresists following 13.5 nm, EUV exposure, and for emulating high-numerical-aperture (high-NA) exposure on 300-mm wafers using two-beam EUV interference. The two respective beamlines are powered by a laser-based high-harmonic generation EUV source. Its capabilities have recently been proven by imaging 20 nm pitch lines and spaces using Lloyd’s Mirror interference lithography. In parallel, time-averaged and time-resolved techniques for studying the ultrafast dynamics of photoresists after EUV exposure, coherent diffractive imaging to study resist interfaces, and more sophisticated interference lithography techniques for printing sub-22 nm pitches on full 300-mm wafers are being developed. Taking advantage of the bright and short EUV pulses now available at imec, we will be able to contribute to a smooth transition towards next generation high-NA lithography.
BT - Novel Patterning Technologies 2021
DA - 2021-02
DO - 10.1117/12.2595038
N2 - Imec’s AttoLab is the first industrial laboratory capable of watching the ultrafast dynamics of photoresists following 13.5 nm, EUV exposure, and for emulating high-numerical-aperture (high-NA) exposure on 300-mm wafers using two-beam EUV interference. The two respective beamlines are powered by a laser-based high-harmonic generation EUV source. Its capabilities have recently been proven by imaging 20 nm pitch lines and spaces using Lloyd’s Mirror interference lithography. In parallel, time-averaged and time-resolved techniques for studying the ultrafast dynamics of photoresists after EUV exposure, coherent diffractive imaging to study resist interfaces, and more sophisticated interference lithography techniques for printing sub-22 nm pitches on full 300-mm wafers are being developed. Taking advantage of the bright and short EUV pulses now available at imec, we will be able to contribute to a smooth transition towards next generation high-NA lithography.
PB - SPIE
PY - 2021
SN - 9781510640535
EP - 1161010
T2 - Novel Patterning Technologies 2021
TI - Introduction to imec's AttoLab for ultrafast kinetics of EUV exposure processes and ultra-small pitch lithography
VL - 11610
ER -