TY - JOUR
AU - Alison Rugar
AU - Haiyu Lu
AU - Constantin Dory
AU - Shuo Sun
AU - Patrick McQuade
AU - Zhi-Xun Shen
AU - Nicholas Melosh
AU - Jelena Vučković
AB - Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV–) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV– centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
BT - Nano Letters
DA - 2020-02
DO - 10.1021/acs.nanolett.9b04495
IS - 3
N1 - doi: 10.1021/acs.nanolett.9b04495
N2 - Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV–) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV– centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
PB - American Chemical Society
PY - 2020
SN - 1530-6984
SP - 1614
EP - 1619
T2 - Nano Letters
TI - Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
UR - https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04495#
VL - 20
ER -