@article{12089,
  author = {Alison Rugar and Haiyu Lu and Constantin Dory and Shuo Sun and Patrick McQuade and Zhi-Xun Shen and Nicholas Melosh and Jelena Vučković},
  title = {Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth},
  abstract = {Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV–) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV– centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.},
  year = {2020},
  journal = {Nano Letters},
  volume = {20},
  pages = {1614-1619},
  month = {2020-02},
  publisher = {American Chemical Society},
  isbn = {1530-6984},
  url = {https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04495#},
  doi = {10.1021/acs.nanolett.9b04495},
  note = {doi: 10.1021/acs.nanolett.9b04495},
}